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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF6S21100H/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF6S21100HR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15.9 dB Drain Efficiency -- 27.6% IM3 @ 10 MHz Offset -- - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 39.5 dBc @ 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched, Controlled Q, for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21100HSR3
2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S21100HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6S21100HSR3
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 68 - 0.5, +12 388 2.2 - 65 to +150 200 Unit Vdc Vdc W W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 W CW Case Temperature 80C, 23 W CW Symbol RJC Value (1) 0.45 0.52 Unit C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
MRF6S21100HR3 MRF6S21100HSR3 1
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) gfs 1 2 -- -- 2 2.8 0.21 5.3 3 4 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss (1) Part is internally matched both on input and output. Gps D IM3 ACPR IRL 15 26 -- -- -- 15.9 27.6 - 37 - 39.5 - 16 17 -- - 35 - 38 -9 dB % dBc dBc dB
MRF6S21100HR3 MRF6S21100HSR3 2
MOTOROLA RF DEVICE DATA
B1 VBIAS R1 R2 + C1 + C2 C4 C3 C5 Z8 Z5 RF INPUT Z1 C6 DUT Z2 Z3 Z4 Z6 Z7 Z9 Z10 Z11 C7 Z12 RF OUTPUT C8 + C9 + C10 + C11 C13 + C12 VSUPPLY + C14
Z1, Z12 Z2 Z3 Z4 Z5 Z6
1.250 1.070 0.330 0.093 1.255 0.160
x 0.084 x 0.084 x 0.800 x 0.800 x 0.040 x 0.880
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.320 x 0.880 Microstrip 0.120 x 0.820 Microstrip 0.035 x 0.320 Microstrip 0.335 x 0.200 Microstrip 0.650 x 0.084 Microstrip Arlon GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6S21100HR3(SR3) Test Circuit Schematic
Table 1. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values
Part B1 C1 C2 C3 C4, C13 C5 C6, C7 C8 C9, C10, C11, C12 C14 R1 R2 Ferrite Bead 1.0 F, 50 V Tantalum Capacitor 10 F, 50 V Electrolytic Capacitor 1000 pF 100B Chip Capacitor 0.1 F 100B Chip Capacitors 5.1 pF Chip Capacitor 15 pF Chip Capacitors 6.8 pF Chip Capacitors 22 F, 35 V Tantalum Capacitors 100 F, 50 V Electrolytic Capacitor 1.0 kW, 1/8 W Chip Resistor 10 W, 1/8 W Chip Resistor Description Part Number 2743019447 T491C105M050 EEV - HB1H100P 100B102JCA500X CDR33BX104AKWS 100B5R1JCA500X 100B150JCA500X 100B6R8JCA500X T491X226K035AS4394 515D107M050BB6A Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague
MOTOROLA RF DEVICE DATA
MRF6S21100HR3 MRF6S21100HSR3 3
R1 C1 B1 R2 C5 C8
C9 C10
C14
VGG C11 C2 C4 C6 C3 C12
VDD
C13
C7
CUT OUT AREA
MRF6S21100H Rev 3
Figure 2. MRF6S21100HR3(SR3) Test Circuit Component Layout
MRF6S21100HR3 MRF6S21100HSR3 4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 16.2 16 G ps , POWER GAIN (dB) 15.8 IM3-U IRL 15.4 15.2 ACPR-L 15 2080 2100 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 2120 2140 2160 2180 IM3-L ACPR-U -42 -44 2200 -40 IM3 (dBc), ACPR (dBc) 15.6 -38 -10 -20 -30 -40 VDD = 28 Vdc Pout = 23 W (Avg.) IDQ = 950 mA D 2-Carrier W-CDMA 10 MHz Carrier Spacing Gps -36 28 27
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
D 15.4 G ps , POWER GAIN (dB) 15.2 15 14.8 14.6 14.4 2080 VDD = 28 Vdc Pout = 55 W (Avg.) IDQ = 950 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth IM3-L IM3-U Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) ACPR-U ACPR-L 2100 2120 2140 2160 2180 f, FREQUENCY (MHz) -28 -30 2200 Gps 42 40 -24 -26
D, DRAIN EFFICIENCY (%)
15.6
44
IRL
IM3 (dBc), ACPR (dBc)
-10 -20 -30 -40
Figure 4. 2 - Carrier W - CDMA Broadband Performance
17.5 17 G ps , POWER GAIN (dB) 16.5 16 15.5 700 mA 15 14.5 450 mA 14 13.5 1 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 10 100 500 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1450 mA 1200 mA 950 mA
-20 -25 -30 -35 -40 -45 -50 700 mA -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 950 mA IDQ = 450 mA 1450 mA 1200 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MOTOROLA RF DEVICE DATA
MRF6S21100HR3 MRF6S21100HSR3 5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45 -50 -55 -60 0.1 7th Order VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 950 mA Two-Tone Measurements, Center Frequency = 2140 MHz 1 10 100 5th Order Pout , OUTPUT POWER (dBm) 3rd Order
56 54 52 Actual 50 48 46 44 28 30 32 34 36 38 40 42 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 950 mA Pulse CW, 8 sec(on), 1 msec(off) Center Frequency = 2140 MHz P3dB = 51.5 dBm (141 W) P1dB = 50.9 dBm (123 W) Ideal
TWO-TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 950 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W-CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
Figure 8. Pulse CW Output Power versus Input Power
-10 D IM3 (dBc), ACPR (dBc) IM3 -20
40
30
-30 ACPR
20
Gps
-40
10 0 0.4 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100
-50 -60
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
18 16 G ps , POWER GAIN (dB) 14 12 10 8 D 6 1 10 Pout, OUTPUT POWER (WATTS) CW 100 200 VDD = 28 Vdc IDQ = 950 mA f = 2140 MHz Gps 60 50 D, DRAIN EFFICIENCY (%) 40 30 20 10 0 G ps , POWER GAIN (dB) 17
16
15 16 V 14 VDD = 12 V 20 V 24 V 32 V
13
28 V IDQ = 950 mA, f = 2140 MHz
12 0 20 40 60 80 100 120 140 160 180 Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21100HR3 MRF6S21100HSR3 6
Figure 11. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
109 MTTF FACTOR (HOURS x AMPS 2 )
108
107
106 100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
TYPICAL CHARACTERISTICS W - CDMA TEST SIGNAL
100 10 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) +20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 3.84 MHz Channel BW
PROBABILITY (%)
f, FREQUENCY (MHz)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
MOTOROLA RF DEVICE DATA
MRF6S21100HR3 MRF6S21100HSR3 7
f = 2200 MHz Zload f = 2080 MHz Zo = 10
f = 2200 MHz
Zsource
f = 2080 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource 2.17 - j5.54 2.05 - j5.26 1.93 - j5.19 1.85 - j5.04 1.69 - j4.86 Zload 1.82 - j2.52 1.73 - j2.31 1.65 - j2.16 1.62 - j2.04 1.53 - j1.90
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF6S21100HR3 MRF6S21100HSR3 8 MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF6S21100HR3 MRF6S21100HSR3 9
NOTES
MRF6S21100HR3 MRF6S21100HSR3 10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B G
1
2X
Q bbb
M
TA
M
B
M
3 (FLANGE)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE F NI - 780 MRF6S21100HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE F NI - 780S MRF6S21100HSR3
MOTOROLA RF DEVICE DATA
MRF6S21100HR3 MRF6S21100HSR3 11
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF6S21100HR3 MRF6S21100HSR3 12
MOTOROLA RF DEVICE DATA
MRF6S21100H/D

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